jansr2n7404 Intersil Corporation, jansr2n7404 Datasheet - Page 3

• Manufacturer Part Number: jansr2n7404
• Description: 15a, -200v, 0.290 Ohm, Rad Hard, P-channel Power Mosfet
• Manufacturer: Intersil Corporation

Source to Drain Diode Specifications
Electrical Specifications up to 100K RAD
NOTES:
Single Event Effects (SEB, SEGR)
NOTES:
Typical Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
Forward Voltage
Reverse Recovery Time
Single Event Effects Safe Operating
Area
1. Pulse test, 300 s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
-200
-160
-120
-80
-40
0
0
PARAMETER
TEMP = 25
FLUENCE = 1E5 IONS/cm
TEST
PARAMETER
5
o
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm
C
2
(typical), T
10
V
GS
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
SYMBOL
(V)
C
2
V
(TYPICAL)
t
2
2
SD
= 25
15
rr
, RANGE = 43
, RANGE = 36
SYMBOL
SEESOA
(Note 4)
o
Unless Otherwise Specified
C.
GS
I
I
SD
SD
20
= -12V, V
= 15A
= 15A,dI
T
r
SYMBOL
V
DS(ON)12
C
V
JANSR2N7404
BV
DS(ON)
GS(TH)
I
I
SPECIES
= 25
GSS
DSS
TEST CONDITIONS
DSS
ION
Br
Br
Br
Br
Ni
o
DS
25
SD
C, Unless Otherwise Specified
2-78
/dt = 100A/ s
= 0V and V
ENVIRONMENT (NOTE 5)
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
TEST CONDITIONS
= 0, I
= V
= 20V, V
= 0, V
= -12V, I
= -12V, I
1E-3
1E-4
1E-5
1E-6
1E-7
TYPICAL LET
(MeV/mg/cm)
DS
GS
-10
D
DS
, I
26
37
37
37
37
= 0V, V
= 1mA
D
D
D
= -160V
DS
GAMMA DOT CURRENT TO I
= 1mA
= 15A
= 9A
= 0V
DS
= 80% BV
-30
MIN
-0.6
-
RANGE ( )
TYPICAL
DRAIN SUPPLY (V)
43
36
36
36
36
-200
MIN
-2.0
DSS
-
-
-
-
TYP
-100
-
-
.
V
APPLIED
GS
(V)
20
10
15
20
AS
0.290
MAX
-4.57
5
BIAS
MAX
-6.0
100
-1.8
300
25
-
-300
ILM = 10A
30A
100A
300A
MAXIMUM
V
(NOTE 6)
DS
UNITS
UNITS
-200
-200
-160
-100
-40
(V)
ns
nA
BIAS
V
V
V
V
-1000
A