2sj211 Renesas Electronics Corporation., 2sj211 Datasheet

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2sj211

Manufacturer Part Number
2sj211
Description
P-channel Mos Fet For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SJ211.pdf (5 pages)

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<R>
<R>
Document No. D17907EJ4V0DS00 (4th edition)
(Previous No. TC-2332A)
Date Published February 2006 NS CP(K)
Printed in Japan
device which can be driven directly by the output of ICs having a
5 V power source.
characteristics, it is suitable for driving actuators such as motors,
relays, and solenoids.
FEATURES
• Directly driven by ICs having a 5 V power supply.
• Not necessary to consider driving current because of its high
• Possible to reduce the number of parts by omitting the bias
ORDERING INFORMATION
Marking: H18
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
The 2SJ211, P-channel vertical type MOSFET, is a switching
The 2SJ211 has low on-state resistance and excellent switching
input impedance.
resistor.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
PART NUMBER
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2SJ211
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Note
DS
GS
= 0 V)
= 0 V)
SC-59 (Mini Mold)
The mark <R> shows major revised points.
P-CHANNEL MOSFET
PACKAGE
A
I
FOR SWITCHING
= 25°C)
D(pulse)
V
V
I
D(DC)
T
DATA SHEET
T
P
GSS
DSS
stg
ch
T
−55 to +150
MOS FIELD EFFECT TRANSISTOR
−100
m200
m400
m20
200
150
mW
mA
mA
°C
°C
V
V
PACKAGE DRAWING (Unit: mm)
EQUIVALENT CIRCUIT
2
1
Gate
2.8 ±0.2
Gate
Protection
Diode
1.5
3
Marking
2SJ211
Source
Drain
0.65
+0.1
–0.15
Body
Diode
1. Source
2. Gate
3. Drain
1991

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2sj211 Summary of contents

Page 1

... The 2SJ211, P-channel vertical type MOSFET switching device which can be driven directly by the output of ICs having power source. The 2SJ211 has low on-state resistance and excellent switching characteristics suitable for driving actuators such as motors, relays, and solenoids. FEATURES • ...

Page 2

... Wave Form 90% I (− 10% 10 Wave Form d(on) r d(off off Data Sheet D17907EJ4V0DS 2SJ211 MIN. TYP. MAX. UNIT −1.0 m 1.0 µ A −1.4 −1.8 −2 110 150 160 150 µ A µ Ω ...

Page 3

... TYPICAL CHARACTERISTICS (T A <R> TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 240 200 160 120 100 T - Ambient Temperature - ˚ 25°C) 125 150 175 Data Sheet D17907EJ4V0DS 2SJ211 3 ...

Page 4

... Data Sheet D17907EJ4V0DS 2SJ211 ...

Page 5

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ211 M8E 02. 11-1 ...

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