2sj211 Renesas Electronics Corporation., 2sj211 Datasheet - Page 2

• Manufacturer Part Number: 2sj211
• Description: P-channel Mos Fet For Switching
• Manufacturer: Renesas Electronics Corporation.

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ELECTRICAL CHARACTERISTICS (T
Note Pulsed
2
TEST CIRCUIT SWITCHING TIME
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
0
GS
τ = 1 s
Duty Cycle ≤ 1%
PG.
(−)
µ
τ
CHARACTERISTICS
R
G
D.U.T.
Note
R
V
DD
L
Note
V
Wave Form
I
Wave Form
D
GS
SYMBOL
R
R
V
| y
t
t
I
DS(on)1
DS(on)2
C
I
C
C
GS(off)
d(on)
d(off)
DSS
GSS
t
t
oss
A
fs
iss
rss
r
f
V
I
|
= 25°C)
D
GS
0
(−)
0
Data Sheet D17907EJ4V0DS
(−)
10%
t
10%
d(on)
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
I
D
DS
GS
DS
DS
GS
GS
DS
GS
GS
DD
= −10 mA
t
90%
= −100 V, V
= −5.0 V, I
= −5.0 V, I
= −5.0 V
=
= −4.0 V, I
= −10 V, I
= 0 V
= −4.0 V, R
= −5.0 V
on
m
t
20 V, V
r
V
I
GS
D
TEST CONDITIONS
t
d(off)
D
D
D
D
DS
t
= −10 mA
G
GS
off
= −1.0
= −10 mA
= −10 mA
90%
90%
= 10 Ω
= 0 V
= 0 V
10%
t
f
µ
A
MIN.
−1.4
20
TYP.
−1.8
110
150
160
150
45
15
11
27
16
2
MAX.
−1.0
m
−2.4
30
20
1.0
2SJ211
UNIT
mS
µ
µ
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
A
A