2sj347 TOSHIBA Semiconductor CORPORATION, 2sj347 Datasheet
2sj347
Manufacturer Part Number
2sj347
Description
P Channel Mos Type High Speed Switching, Anarog Switch Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SJ347.pdf
(5 pages)
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High Speed Switching Applications
Analog Switch Applications
•
•
•
•
Marking
Absolute Maximum Ratings
Electrical Characteristics
Low threshold voltage: V
High speed
Small package
Complementary to 2SK1830
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Gateate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshould voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
Turn-on time
Turn-off time
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
th
= −0.5~−1.5 V
Equivalent Circuit
(Ta = 25°C)
(Ta = 25°C)
V
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
⎪Y
I
I
C
V
C
T
C
GSS
T
DSS
P
V
GSS
t
t
I
oss
on
off
DS
stg
rss
D
ch
iss
th
fs
D
⎪
2SJ347
V
I
V
V
V
I
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
GS
DD
GS
= −100 μA, V
= −10 mA, V
−55~150
Rating
= −20 V, V
= −3 V, I
= −3 V, I
= −3 V, V
= −3 V, V
= −3 V, V
= −7 V, V
= −3 V, I
= 0~−2.5 V
= −3 V, I
= 0~−2.5 V
−20
−50
100
150
−7
1
Test Condition
D
D
D
D
GS
GS
GS
DS
GS
GS
= −0.1 mA
= −10 mA
= −10 mA,
= −10 mA,
GS
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= −2.5 V
= 0
= 0
Unit
mW
mA
°C
°C
V
V
Weight: 2.4 mg (typ.)
JEDEC
JEITA
TOSHIBA
−0.5
Min
−20
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
10.4
0.15
0.13
2.8
8.4
20
⎯
⎯
⎯
⎯
⎯
2-2H1B
2007-11-01
―
―
−1.5
Max
−1
−1
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2SJ347
Unit: mm
Unit
mS
μA
μA
pF
pF
pF
μs
Ω
V
V
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2sj347 Summary of contents
Page 1
... Weight: 2.4 mg (typ.) °C Min Typ. ⎯ ⎯ −20 ⎯ ⎯ ⎯ −0.5 ⎯ ⎯ 15 ⎯ 20 ⎯ 10.4 ⎯ 2.8 ⎯ 8.4 ⎯ 0.15 ⎯ 0.13 2007-11-01 2SJ347 Unit: mm Max Unit −1 μA ⎯ V −1 μA −1.5 V ⎯ mS Ω 40 ⎯ pF ⎯ pF ⎯ pF ⎯ μs ⎯ ...
Page 2
... Switching Time Test Circuit 2 2SJ347 2007-11-01 ...
Page 3
... 3 2SJ347 2007-11-01 ...
Page 4
... 4 2SJ347 2007-11-01 ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SJ347 20070701-EN GENERAL 2007-11-01 ...