si6975dq Vishay, si6975dq Datasheet

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... 25_C 70_C stg Symbol sec R thJA Steady State Steady State R thJF Si6975DQ Vishay Siliconix P-Channel MOSFET 10 secs Steady State Unit –12 "8 –5.1 –4.3 –4.1 –3.5 –30 –1.0 –0.7 1.14 0.83 0.73 0.53 –55 to 150 ...

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... Si6975DQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

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... Source-to-Drain Voltage (V) SD Document Number: 71319 S-02318—Rev. A, 23-Oct-00 New Product 4000 3200 2400 1600 = 2 4 25_C J 1.2 1.5 Si6975DQ Vishay Siliconix Capacitance C iss C oss 800 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1. ...

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... Si6975DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 –0.2 –0.4 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot ...