si6975dq Vishay, si6975dq Datasheet - Page 3

• Manufacturer Part Number: si6975dq
• Description: Dual P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71319
S-02318—Rev. A, 23-Oct-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.10
0.08
0.06
0.04
0.02
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
V
Source-Drain Diode Forward Voltage
= 5.1 A
GS
On-Resistance vs. Drain Current
5
= 6 V
0.3
5
= 1.8 V
V
T
SD
Q
J
= 150_C
g
– Source-to-Drain Voltage (V)
I
– Total Gate Charge (nC)
10
D
– Drain Current (A)
Gate Charge
0.6
10
15
0.9
15
V
V
GS
GS
T
20
J
= 2.5 V
= 4.5 V
= 25_C
1.2
20
25
1.5
30
25
New Product
4000
3200
2400
1600
0.10
0.08
0.06
0.04
0.02
0.00
1.60
1.40
1.20
1.00
0.80
0.60
800
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
–25
D
rss
GS
= 5.1 A
2
= 4.5 V
T
V
V
I
2
0
J
D
GS
DS
– Junction Temperature (_C)
= 5.1 A
C
C
oss
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
4
iss
25
Capacitance
Vishay Siliconix
50
4
6
75
Si6975DQ
8
100
6
www.vishay.com
10
125
150
12
8
3