si3831dv Vishay, si3831dv Datasheet - Page 3

• Manufacturer Part Number: si3831dv
• Description: Bi-directional P-channel Mosfet/power Switch
• Manufacturer: Vishay

Notes
a.
b.
Document Number: 70785
S-56947—Rev. C, 28-Dec-98
SPECIFICATIONS (V
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
GATE BUFFER REFERENCE
FIGURE 5. Gate Buffer Referenced to Most Positive Supply
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
Parameter
b
IN
a
a
a
a
BS
Body
Bias
= 0 V, T
Symbol
V
r
r
I
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
t
t
gs
gd
r
f
g
)
J
= 25_C UNLESS OTHERWISE NOTED)
V
Load
DS
V
V
I
I
= –5.5 V, V
V
D
V
DS
DS
^ –1.0 A, V
DS
= –5 V, V
= 0 V, V
V
= –5.5 V, V
V
V
V
V
1 0 A V
GS
DS
DS
GS
5 V V
DS
V
V
Test Condition
DD
DD
= –2.5 V, I
= –3 V, V
= –3 V, V
= –4.5 V, I
= V
GS
= –3 V, R
GS
GS
GS
= 0 V, V
GEN
3 V R
= –5.5 V to +0.3 V
GS
, I
= –4.5 V, I
D
= –4.5 V, R
,
GS
GS
= 0 V, V
D
4 5 V I
= –250 mA
D
L
L
4 5 V R
FIGURE 6. Gate Buffer Referenced to Body Bias Pin
SB
= –2.0 A
= –2.4 A
= –4.5 V
= –2.5 V
= 3 W
= 0 V, T
3
D
SB
= –2.4 A
G
= 0 V
= 6 W
2 4 A
J
6
IN
= 70_C
Min
–0.4
–8
–3
Body
Bias
www.vishay.com S FaxBack 408-970-5600
0.130
0.180
Typ
0.23
0.14
Vishay Siliconix
2.0
12
55
90
85
Si3831DV
Load
"100
Max
0.170
0.240
110
180
170
4.0
–1
–5
25
Unit
nA
nC
mA
mA
ns
ns
V
A
A
W
W
C
2-3