si3831dv Vishay, si3831dv Datasheet - Page 5

• Manufacturer Part Number: si3831dv
• Description: Bi-directional P-channel Mosfet/power Switch
• Manufacturer: Vishay

Document Number: 70785
S-56947—Rev. C, 28-Dec-98
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
–0.1
–0.2
0.1
0.4
0.3
0.2
0.1
0.0
0.01
8
1
0.1
–50
2
1
0
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
–25
0.2
T
J
V
I
= 150_C
D
SD
0.4
= 250 mA
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
J
– Temperature (_C)
0.6
25
10
–3
0.8
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
1.0
75
T
J
= 25_C
100
1.2
125
1.4
10
–2
Square Wave Pulse Duration (sec)
150
1.6
10
–1
0.5
0.4
0.3
0.2
0.1
15
12
0.01
0
9
6
3
0
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 0.5 A
1
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
1
DM
JM
– Gate-to-Source Voltage (V)
Single Pulse Power
0.10
– T
2
t
1
A
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= P
Time (sec)
t
2
DM
I
D
Z
Vishay Siliconix
= 2.4 A
3
thJA
thJA
t
t
1
2
(t)
= 80_C/W
1.00
10
4
Si3831DV
5
30
10.00
6
2-5