si3850adv Vishay, si3850adv Datasheet - Page 3

• Manufacturer Part Number: si3850adv
• Description: Complementary Mosfet Half-bridge N- And P-channel
• Manufacturer: Vishay

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 73789
S-60470-Rev. A, 27-Mar-06
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.0
0.0
0.0
I
D
= 1 A
0.5
On-Resistance vs. Drain Current
V
0.7
0.5
GS
V
DS
V
Output Characteristics
Q
= 2.5 V
DS
1.0
g
– Drain-to-Source Voltage (V)
= 10 V
I
– Total Gate Charge (nC)
D
Gate Charge
– Drain Current (A)
1.4
1.0
V
1.5
V
DS
GS
= 5 V
V
= 5.0 thru 4 V
GS
2.0
V
3 V
2.1
1.5
= 3 V
GS
V
= 15 V
GS
2.5 V
2.5
= 4.5 V
2.8
2.0
3.0
2 V
3.5
2.5
3.5
110
1.8
1.6
1.4
1.2
1.0
0.8
0.6
3.0
2.4
1.8
1.2
0.6
0.0
88
66
44
22
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
C
I
D
rss
= 1.2 A
V
4
V
DS
T
GS
Transfer Characteristics
0
J
1
– Junction Temperature (°C)
C
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
oss
25
Capacitance
8
25 °C
50
C
Vishay Siliconix
2
iss
- 55 °C
Si3850ADV
12
75
V
GS
www.vishay.com
100
= 3 V
T
3
V
C
GS
16
= 125 °C
= 4.5 V
125
150
20
4
3