si3201 Silicon Laboratories, si3201 Datasheet - Page 8

• Manufacturer Part Number: si3201
• Description: Proslic Programmable Cmos Slic With Ringing/battery Voltage Generation
• Manufacturer: Silicon Laboratories

Table 6. Si3230 DC Characteristics, V
(V
Si3230
Table 5. Monitor ADC Characteristics
(V
8
Table 4. Linefeed Characteristics (Continued)
(V
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Parameter
Differential Nonlinearity
(6-bit resolution)
Integral Nonlinearity
(6-bit resolution)
Gain Error (voltage)
Gain Error (current)
Parameter
Trapezoidal Ring Crest
Factor Accuracy
Sinusoidal Ring Crest
Factor
Ringing Frequency Accuracy
Ringing Cadence Accuracy
Calibration Time
Power Alarm Threshold
Accuracy
*Note:
DDA
DDA
DDA
, V
,V
, V
DDD
DC resistance round trip; 160 Ω corresponds to 2 kft 26 gauge AWG
DDD
DDD
= 4.75 V to 5.25 V, T
= 3.13 to 5.25 V, T
= 3.13 to 5.25 V, T
Symbol
A
A
Symbol
A
DNLE
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
V
INLE
V
V
V
= 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)
I
OH
OL
IH
L
Symbol
IL
R
CF
DIO1,DIO2,SDITHRU:I
DIO1,DIO2,DOUT,SDITHRU:
At Power Threshold = 300 mW
DDA
DOUT: I
SDO,INT:I
Accuracy of ON/OFF Times
Test Condition
SDO:I
Test Condition
Preliminary Rev. 0.96
= V
I
O
↑CAL to ↓CAL Bit
Crest factor = 1.3
Test Condition
= 4 mA
O
O
DDD
= –8 mA
= –40 mA
O
f = 20 Hz
= 8 mA
= 5.0 V
O
= –4 mA
0.7 x V
V
V
DDD
DDD
–1/2
Min
Min
–10
–1
—
—
—
—
.
– 0.6
– 0.8
DDD
–.05
1.35
Min
–50
–25
–1
—
Typ
Typ
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.3 x V
Max
Max
1/2
Max
1.45
10
20
0.4
10
600
—
—
—
.05
1
D
50
25
1
DD
Unit
Unit
LSB
LSB
Unit
ms
ms
%
%
%
%
µA
V
V
V
V
V