si1965dh Vishay, si1965dh Datasheet
si1965dh
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si1965dh Summary of contents
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... Top View Ordering Information: Si1965DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si1965DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Document Number: 68765 S-81725-Rev. A, 04-Aug-08 New Product thru 2 1 2.0 2.5 3.0 200 160 120 2.0 2 2.0 2.5 3.0 Si1965DH Vishay Siliconix 1.0 0.8 0 ° 125 ° °C C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 80 C oss 40 C rss ...
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... Si1965DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.7 0.6 0.5 0.4 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product °C J 1.0 1.2 1 250 µ 100 125 150 10 Limited by R ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68765 S-81725-Rev. A, 04-Aug-08 New Product 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si1965DH Vishay Siliconix 100 125 T - Case Temperature (°C) C Power, Junction-to-Foot www.vishay.com 150 5 ...
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... Si1965DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...