si1965dh Vishay, si1965dh Datasheet - Page 3

• Manufacturer Part Number: si1965dh
• Description: Dual P-channel 12-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68765
S-81725-Rev. A, 04-Aug-08
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.8
0.6
0.4
0.2
0.0
8
6
4
2
0
0.0
0.0
On-Resistance vs. Drain Current and Gate Voltage
0.0
V
I
D
GS
= 1.1 A
0.5
0.5
0.5
= 1.8 V
V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
1.0
1.0
I
1.0
- Total Gate Charge (nC)
D
V
- Drain Current (A)
DS
Gate Charge
V
= 6 V
GS
1.5
1.5
1.5
= 2.5 V
V
V
DS
GS
V
2.0
2.0
2.0
GS
= 9.6 V
= 4.5 V
= 5 thru 2.5 V
V
V
V
GS
GS
GS
2.5
2.5
2.5
= 1.5 V
= 2 V
= 1 V
New Product
3.0
3.0
3.0
200
160
120
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.0
0.8
0.6
0.4
0.2
0.0
80
40
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
C
rss
V
V
0.5
DS
T
GS
Transfer Characteristics
3
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
V
T
C
GS
C
C
25
oss
Capacitance
= 125 °C
iss
= 4.5 V; 2.5 V; I
T
C
= 25 °C
1.0
50
6
Vishay Siliconix
V
GS
75
= 1.8 V; I
Si1965DH
T
D
C
= 1 A
= - 55 °C
100
1.5
www.vishay.com
9
D
= 0.14 A
125
150
2.0
12
3