si1413dh Vishay, si1413dh Datasheet
si1413dh
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si1413dh Summary of contents
Page 1
... 25_C 85_C stg Symbol Typical sec R thJA Steady State Steady State R thJF Si1413DH Vishay Siliconix Steady State Unit –20 V "8 –2.3 –2.9 –2.0 –1.6 A –8 –1.4 –0.9 1.56 1.0 W 0.81 0.52 –55 to 150 _C Maximum Unit ...
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... Si1413DH Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... V – Source-to-Drain Voltage (V) SD Document Number: 71878 S-20952—Rev. A, 01-Jul-02 New Product 6.0 7.5 6.4 8 25_C J 0.9 1.2 1.5 Si1413DH Vishay Siliconix Capacitance 1000 800 C iss 600 400 200 C oss C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si1413DH Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.3 0.2 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C) J Limited by r DS(on) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 4 New Product 35 28 ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 71878 S-20952—Rev. A, 01-Jul-02 New Product Normalized Thermal Transient Impedance, Junction-to-Foot –2 10 Square Wave Pulse Duration (sec) Si1413DH Vishay Siliconix – www.vishay.com 5 ...