si1413dh Vishay, si1413dh Datasheet - Page 2

• Manufacturer Part Number: si1413dh
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si1413DH
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
8
6
4
2
0
b
0
Parameter
a
a
1
V
DS
Output Characteristics
a
– Drain-to-Source Voltage (V)
V
GS
2
a
J
= 5 thru 2.5 V
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
1.5 V
V
r
I
DS(on)
DS(on)
t
t
I
I
2 V
1 V
GS(th)
V
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
SD
t
t
fs
gs
gd
r
f
g
4
5
New Product
V
DS
I
V
D
DS
^ –1 A, V
= –10 V, V
V
V
V
= –16 V, V
V
V
V
V
V
V
V
DS
DS
GS
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
= –1.4 A, V
= 0 V, V
= –5 V, V
= –2.5 V, I
= –1.8 V, I
= V
= –4.5 V, I
= –10 V, I
= –16 V, V
= –10 V, R
= –10 V, R
GEN
GS
GS
GS
, I
= –4.5 V, I
= –4.5 V, R
GS
D
= 0 V, T
GS
D
D
D
= –100 mA
D
GS
= "8 V
GS
L
L
= –2.9 A
= –2.9 A
= –2.4 A
= –1.0 A
= –4.5 V
= 10 W
= 10 W
= 0 V
= 0 V
J
D
= 85_C
G
8
6
4
2
0
= –2.9 A
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
– Gate-to-Source Voltage (V)
–0.45
Min
1.0
–4
T
C
25_C
= –55_C
1.5
0.095
0.125
0.180
–0.80
Typ
1.2
1.2
13
32
34
42
6
6
S-20952—Rev. A, 01-Jul-02
Document Number: 71878
2.0
"100
Max
0.115
0.155
0.220
–1.1
0.8
8.5
–1
–5
20
50
50
65
125_C
2.5
Unit
nA
m
mA
nC
ns
V
A
W
S
V
3.0