si1025x Vishay, si1025x Datasheet - Page 2

• Manufacturer Part Number: si1025x
• Description: P-channel 60-v D-s Mosfet
• Manufacturer: Vishay

Si1025X
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T
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2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
1.0
0.8
0.6
0.4
0.2
0.0
b, c
0
1
a
a
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
a
J
8 V
= 25 °C, unless otherwise noted
2
V
GS
V
Symbol
R
= 10 V
V
(BR)DSS
I
I
I
C
t
D(on)
DS(on)
V
C
GS(th)
Q
Q
C
t
GSS
DSS
OFF
g
Q
ON
SD
oss
iss
rss
gd
fs
gs
g
3
A
= 25 °C, unless otherwise noted
V
V
V
DS
DD
GS
4
V
V
DS
= - 30 V, V
DS
= - 10 V, I
= - 25 V, R
5 V
4 V
7 V
6 V
V
V
V
V
V
V
= - 50 V, V
V
= - 25 V, V
I
V
GS
DS
V
DS
GS
S
DS
V
V
DS
GEN
DS
DS
GS
DS
= - 200 mA, V
= - 10 V, I
= - 10 V, I
= - 10 V, V
= V
= - 4.5 V, I
Test Conditions
= - 10 V, V
5
= 0 V, V
= - 50 V, V
= 0 V, I
= 0 V, V
= - 10 V, R
D
GS
GS
L
= - 500 mA, T
= 150 Ω, I
, I
GS
= - 15 V, I
GS
D
D
GS
= 0 V, T
D
D
GS
= 0 V, f = 1 MHz
= - 0.25 mA
GS
D
GS
= - 10 µA
= - 500 mA
= - 100 mA
GS
= - 25 mA
= ± 10 V
GS
G
= ± 5 V
= - 4.5 V
= - 10 V
= 10 Ω
= 0 V
D
= 0 V
D
J
≅ - 165 mA,
≅ - 500 mA
J
= 85 °C
= 125 °C
1200
900
600
300
0
0
Min.
- 600
- 60
- 50
- 1
2
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
Typ.
0.26
0.46
100
4
1.7
23
10
20
35
5
T
J
S-80643-Rev. B, 24-Mar-08
= - 55 °C
Document Number: 71433
6
± 200
± 100
- 250
Max.
- 3.0
- 1.4
- 25
8
4
6
125 °C
25 °C
8
Unit
mA
mS
nA
nC
pF
ns
Ω
V
V
10