si1025x Vishay, si1025x Datasheet - Page 3

• Manufacturer Part Number: si1025x
• Description: P-channel 60-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 71433
S-80643-Rev. B, 24-Mar-08
1000
100
20
16
12
10
15
12
8
4
0
9
6
3
0
1
0.00
0.0
0
V
I
GS
D
Source-Drain Diode Forward Voltage
T
0.3
= 500 mA
J
200
On-Resistance vs. Drain Current
= 0 V
0.3
= 125 °C
V
SD
Q
I
g
- Source-to-Drain Voltage (V)
D
0.6
- Total Gate Charge (nC)
V
- Drain Current (mA)
GS
V
400
Gate Charge
0.6
GS
V
= 4.5 V
DS
= 5 V
0.9
= 30 V
600
T
0.9
V
J
GS
T
= - 55 °C
1.2
J
= 25 °C
= 10 V
A
= 25 °C, unless otherwise noted
V
800
1.2
DS
1.5
= 48 V
1000
1.5
1.8
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
10
8
0
8
6
4
2
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
5
GS
V
2
V
GS
V
T
GS
0
= 10 V at 500 mA
DS
J
= 0 V
I
- Junction Temperature (°C)
D
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
= 200 mA
25
Capacitance
10
4
50
Vishay Siliconix
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V at 25 mA
I
D
Si1025X
100
= 500 mA
www.vishay.com
20
8
125
150
25
10
3