bzx55-c3v9 NXP Semiconductors, bzx55-c3v9 Datasheet - Page 2
bzx55-c3v9
Manufacturer Part Number
bzx55-c3v9
Description
Voltage Regulator Diodes
Manufacturer
NXP Semiconductors
Datasheet
1.BZX55-C3V9.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
FEATURES
APPLICATIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
ELECTRICAL CHARACTERISTICS
Total series
T
1996 Apr 26
I
I
P
P
T
T
V
SYMBOL
SYMBOL
F
ZSM
j
stg
j
Total power dissipation:
max. 500 mW
Tolerance series: 5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation: max. 40 W.
Low voltage stabilizers or voltage
references.
tot
ZSM
F
= 25 C; unless otherwise specified.
Voltage regulator diodes
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
forward voltage
PARAMETER
PARAMETER
50 C; lead length 8 mm.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The diodes are available in the normalized E24 5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
The diodes are type branded.
handbook, halfpage
t
T
T
T
t
T
t
T
I
p
p
p
F
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
j
amb
amb
j
j
= 100 s; square wave;
= 100 s; square wave;
= 8.3 ms; square wave;
= 100 mA; see Fig.4
= 25 C prior to surge
= 25 C prior to surge
150 C prior to surge
= 50 C; note 1
= 50 C; note 2
2
CONDITIONS
CONDITIONS
k
MAM239
a
MIN.
MIN.
65
“Per type”
see Table
BZX55 series
Product specification
+200
MAX.
MAX.
250
400
500
200
1.0
40
30
mA
mW
mW
W
W
V
C
C
UNIT
UNIT