fs10km-12a Renesas Electronics Corporation., fs10km-12a Datasheet - Page 3

• Manufacturer Part Number: fs10km-12a
• Description: Mitsubishi Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
y
C
C
C
t
t
t
t
V
R
GSS
DSS
DS (ON)
d (on)
r
d (off)
f
Symbol
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
50
40
30
20
10
20
16
12
POWER DISSIPATION DERATING CURVE
0
8
4
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
V
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
GS
= 20V,10V,8V
10
50
(TYPICAL)
20
100
(Tch = 25°C)
30
6V
I
I
V
V
I
I
I
I
V
V
I
Channel to case
D
GS
D
D
D
D
S
GS
DS
DS
DD
= 5A, V
= 1mA, V
= 1mA, V
= 5A, V
= 5A, V
= 5A, V
= ±100µA, V
150
= ±25V, V
= 600V, V
= 25V, V
= 200V, I
T
Pulse Test
P
C
40
C
D
(°C)
= 25°C
DS
= 35W
GS
GS
GS
DS
GS
DS
5V
(V)
GS
= 10V
= 10V
= 10V
= 0V
D
200
GS
DS
50
= 0V
= 10V
= 5A, V
DS
= 0V, f = 1MHz
= 0V
= 0V
= 0V
Test conditions
GS
= 10V, R
GEN
10
10
10
10
–1
8
6
4
2
0
= R
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
0
2
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
GS
T
Single Pulse
3
C
OUTPUT CHARACTERISTICS
= 50Ω
= 25°C
5 7
MITSUBISHI Nch POWER MOSFET
4
10
1
HIGH-SPEED SWITCHING USE
(TYPICAL)
2
8
V
3
Min.
600
±30
GS
2.5
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
= 20V,10V,8V,6V
5 7
12
10
FS10KM-12A
Limits
2
1500
0.72
3.60
10.0
Typ.
130
190
3.0
1.5
35
25
35
50
—
—
—
—
—
T
Pulse Test
P
2
16
C
D
= 25°C
DS
DS
= 35W
100µs
3
tw =
10µs
1ms
DC
10
5V
(V)
(V)
ms
5
Max.
0.94
4.70
3.57
±10
20
3.5
2.0
—
—
—
—
—
—
—
—
—
—
7
1
Sep. 2001
°C/W
Unit
mA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
V
Ω
V
S
V