fs10km-12a Renesas Electronics Corporation., fs10km-12a Datasheet - Page 5

• Manufacturer Part Number: fs10km-12a
• Description: Mitsubishi Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
–1
8
4
0
1
7
5
3
2
0
7
5
3
2
0
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
V
I
Pulse Test
V
I
D
D
GS
–50
GS
–50
= 5A
= 1mA
V
100V,200V,400V
ON-STATE RESISTANCE VS.
BREAKDOWN VOLTAGE VS.
DS
= 10V
= 0V
CHANNEL TEMPERATURE
CHANNEL TEMPERATURE
GATE-SOURCE VOLTAGE
20
GATE CHARGE Q
=
VS. GATE CHARGE
0
0
(TYPICAL)
(TYPICAL)
(TYPICAL)
40
50
50
60
100
100
g
T
I
D
(nC)
C
h = 25°C
= 10A
80
150
150
100
10
10
10
10
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
= 0.05
= 0.02
–4
D = 1.0
= 0.1
= 0.5
= 0.2
2 3 5 7
Single Pulse
5.0
4.0
3.0
2.0
1.0
40
32
24
16
8
0
0
10
0
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
SOURCE-DRAIN VOLTAGE V
V
I
–3
D
DS
–50
2 3 5 7
FORWARD CHARACTERISTICS
= 1mA
= 0.01
= 10V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
0.8
MITSUBISHI Nch POWER MOSFET
SOURCE-DRAIN DIODE
10
PULSE WIDTH t
CHARACTERISTICS
–2
0
2 3 5 7
HIGH-SPEED SWITCHING USE
(TYPICAL)
(TYPICAL)
1.6
50
10
–1
2.4
2 3 5 7
100
FS10KM-12A
w
(s)
10
T
25°C
75°C
125°C
V
Pulse Test
P
3.2
D
tw
C
GS
0
DM
=
2 3 5 7
=
T
SD
tw
= 0V
T
150
(V)
4.0
10
1
2 3 5 7
Sep. 2001
10
2