sud50n03-09p Vishay, sud50n03-09p Datasheet

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sud50n03-09p

Manufacturer Part Number
sud50n03-09p
Description
N-channel 30-v Mosfet
Manufacturer
Vishay
Datasheet

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SUD50N03-09P
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SUD50N03-09P
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sud50n03-09p-E3
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sud50n03-09p-E3
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sud50n03-09p-E3
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Company:
Part Number:
sud50n03-09p-E3
Quantity:
70 000
Ordering Information: SUD50N03-09P
Notes
a.
b.
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on FR4 Board, t v 10 sec.
Based on maximum allowable Junction Temperature, package limitation current is 50 A.
DS
30
30
(V)
G
Top View
TO-252
D
SUD50N03-09P—E3 (Lead Free)
S
a
a
0.0095 @ V
0.014 @ V
a
a
Drain Connected to Tab
r
DS(on)
Parameter
Parameter
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
63
52
(A)
Steady State
T
L = 0 1 mH
L = 0.1 mH
b
b
T
T
t v 10 sec
T
C
C
C
A
b
= 100_C
= 25_C
= 25_C
= 25_C
G
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
AS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D Optimized for High- or Low-Side
D 100% R
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
stg
g
Typical
Tested
1.8
16
40
−55 to 175
Limit
SUD50N03-09P
44.5
"20
65.2
7.5
63
30
50
10
35
61
Vishay Siliconix
b
a
b
Maximum
2.3
20
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
V
A
1

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sud50n03-09p Summary of contents

Page 1

... 0.014 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N03-09P SUD50N03-09P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current ...

Page 2

... SUD50N03-09P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... Junction Temperature (_C) J Document Number: 71856 S-40573—Rev. E, 29-Mar-04 0.05 0. −55_C C 25_C 0.03 125_C 0.02 0.01 0. 100 100 125 150 175 SUD50N03-09P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...

Page 4

... SUD50N03-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com 4 1000 100 10 1 0.1 0.01 125 150 ...

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