si4936bdy Vishay, si4936bdy Datasheet

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si4936bdy

Manufacturer Part Number
si4936bdy
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
si4936bdy-T1-E3
Manufacturer:
Vishay
Quantity:
1 830
Part Number:
si4936bdy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4936bdy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 74469
S-70306-Rev. A, 12-Feb-07
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 sec.
c. Maximum under Steady State conditions is 110 °C/W.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information: Si4936BDY-T1-E3 (Lead (Pb)-free)
V
DS
30
(V)
S
G
S
G
1
2
1
2
0.051 at V
0.035 at V
1
2
3
4
r
DS(on)
Top View
SO-8
GS
GS
(Ω)
J
= 4.5 V
= 10 V
= 150 °C)
a, c
Dual N-Channel 30-V (D-S) MOSFET
8
7
6
5
D
D
D
D
1
1
2
2
I
D
6.9
5.7
(A)
Steady State
t ≤ 10 sec
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
4.5 nC
g
(Typ)
New Product
G
1
Symbol
N-Channel MOSFET
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
D
S
FEATURES
APPLICATIONS
stg
• TrenchFET
• Low Current DC/DC Conversion
• Notebook System Power
1
1
Typical
58
38
®
Power MOSFET
- 55 to 150
5.9
4.7
1.7
1.3
G
Limit
± 20
2
6.9
5.5
2.3
2.8
1.8
2
30
30
a, b
a, b
a, b
a, b
a, b
N-Channel MOSFET
Maximum
62.5
D
S
45
Vishay Siliconix
2
2
Si4936BDY
www.vishay.com
°C/W
Unit
RoHS
Unit
COMPLIANT
°C
W
V
A
1

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si4936bdy Summary of contents

Page 1

... Top View Ordering Information: Si4936BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4936BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 74469 S-70306-Rev. A, 12-Feb-07 New Product 2.0 2.5 3.0 800 600 400 200 24 30 1.7 1.6 1.5 1.4 1.3 1 1.1 1.0 0.9 0.8 0 Si4936BDY Vishay Siliconix ° 125 ° 0.0 0.5 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si4936BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.6 2 250 µA D 2.2 2.0 1.8 1.6 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0.08 0.06 0. °C J 0.02 0.8 1.0 1.2 75 100 125 150 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74469 S-70306-Rev. A, 12-Feb-07 New Product 3.0 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- Si4936BDY Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... Si4936BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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