si4800bdy Vishay, si4800bdy Datasheet - Page 3

• Manufacturer Part Number: si4800bdy
• Description: N-channel Reduced Qg, Fast Switching Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
V
GS
= 10 thru 5 V
0.040
0.032
0.024
0.016
0.008
0.000
40
35
30
25
20
15
10
6
5
4
3
2
1
0
5
0
0
0
0
On-Resistance vs. Drain Current
V
I
5
D
DS
2
= 9 A
1
V
DS
= 15 V
Q
Output Characteristics
V
g
- Drain-to-Source Voltage (V)
GS
10
- Total Gate Charge (nC)
I
D
= 4.5 V
Gate Charge
- Drain Current (A)
4
2
15
4 V
6
3
20
V
GS
3 V
= 10 V
8
4
25
30
10
5
1200
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
800
600
400
200
40
35
30
25
20
15
10
5
0
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
V
I
0.5
- 25
D
GS
= 9 A
C
rss
= 10 V
V
1.0
4
T
GS
Transfer Characteristics
0
V
J
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
1.5
- Drain-to-Source Voltage (V)
25
Capacitance
8
2.0
C
50
C
oss
Vishay Siliconix
iss
2.5
Si4800BDY
T
25 °C
12
C
75
= - 55 °C
3.0
100
www.vishay.com
3.5
16
125 °C
125
4.0
150
4.5
20
3