si4800bdy Vishay, si4800bdy Datasheet - Page 4

• Manufacturer Part Number: si4800bdy
• Description: N-channel Reduced Qg, Fast Switching Mosfet
• Manufacturer: Vishay

Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.0
0.4
0.2
50
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
- Temperature (°C)
25
T
J
= 150 °C
0.6
50
I
D
= 250 µA
75
0.8
0.01
100
0.1
100
10
T
1
J
0.1
= 25 °C
1.0
Safe Operating Area, Junction-to-Ambient
Limited
by R
* V
125
GS
DS(on)*
> minimum V
150
1.2
V
DS
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
GS
at which R
10
DS(on)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
150
120
90
60
30
0
10
0
is specified
-3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
DC
1 ms
10 ms
100 ms
1 s
10 s
2
100
V
10
GS
-2
- Gate-to-Source Voltage (V)
4
Time (s)
I
D
= 9 A
S-83039-Rev. H, 29-Dec-08
10
Document Number: 72124
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