2sk1930 TOSHIBA Semiconductor CORPORATION, 2sk1930 Datasheet
2sk1930
Manufacturer Part Number
2sk1930
Description
N Channel Mos Type High Speed, High Voltage Switching, Chopper Regulator, Dc-dc Converter And Motor Drive Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SK1930.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK1930
Manufacturer:
HIT/RENESAS
Quantity:
12 500
Chopper Regulator, DC−DC Converter, and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current : I
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII
GS
DC
Pulse (Note 1)
= 20 kΩ)
: V
DSS
th
(Note 1)
= 1.5~3.5 V (V
= 300 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch–c)
th (ch–a)
: R
: |Y
V
V
V
T
I
T
DGR
P
GSS
DSS
I
DP
stg
D
ch
D
DS (ON)
2SK1930
fs
DS
| = 2.0 S (typ.)
= 10 V, I
DS
= 3.0 Ω (typ.)
−55~150
= 800 V)
Rating
1000
1000
Max
1.25
83.3
±20
100
150
12
4
1
D
= 1 mA)
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
V
A
Weight: 1.5 g (typ.)
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-10S1B
2-10S2B
.5
)
2006-11-09
―
―
―
―
2SK1930
Unit: mm
Related parts for 2sk1930
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2sk1930 Summary of contents
Page 1
... 100 150 ° −55~150 °C stg Symbol Max Unit R 1.25 ° (ch–c) R 83.3 ° (ch–a) 1 2SK1930 .5 ) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2006-11-09 ...
Page 2
... (Ta = 25°C) Symbol Test Condition I — — DRP DSF 2SK1930 Min Typ. Max — — ±100 — — 300 1000 — — 1.5 — 3.5 — 3.0 3.8 1.0 2.0 — — 700 — — ...
Page 3
... 3 2SK1930 2006-11-09 ...
Page 4
... 4 2SK1930 2006-11-09 ...
Page 5
... 5 2SK1930 2006-11-09 ...
Page 6
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK1930 20070701-EN 2006-11-09 ...