2sk2508 TOSHIBA Semiconductor CORPORATION, 2sk2508 Datasheet - Page 2

• Manufacturer Part Number: 2sk2508
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(Gate−source plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K2508
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
C
I
I
|Y
C
C
Q
Q
GSS
DRP
DSS
V
I
t
t
Q
Q
DSF
DR
t
on
off
oss
t
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
V
I
V
V
V
V
V
I
I
dI
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= 10 mA, V
= 13 A, V
= 13 A, V
= 250 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 10 V, I
≈ 200 V, V
/ dt = 100 A / μs
2
D
D
D
GS
GS
GS
(Ta = 25°C)
GS
Test Condition
Test Condition
= 1 mA
= 6.5 A
DS
GS
= 6.5 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 10 V, I
—
—
D
= 13 A
250
Min
Min
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
1800
Typ.
0.18
Typ.
130
500
260
0.3
13
15
25
10
70
40
25
15
—
—
—
—
—
—
—
2006-11-21
2SK2508
Max
0.25
−2.0
Max
±10
100
3.5
13
52
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
Ω
S
A
A
V