2sk2201 TOSHIBA Semiconductor CORPORATION, 2sk2201 Datasheet
2sk2201
Manufacturer Part Number
2sk2201
Description
N Channel Mos Type High Speed, High Voltage Switching, Chopper Regulator, Dc-dc Converter And Motor Drive Applications
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SK2201.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2201
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2sk2201(TE16L1
Manufacturer:
SHARP
Quantity:
131
Part Number:
2sk2201(TE16L1,NQ)
Manufacturer:
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Quantity:
20 000
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
4 V gate drive
Low drain−source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristic
Characteristic
DD
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
= 50 V, T
GS
Pulse (Note 1)
DC (Note 1)
= 20 kΩ)
ch
: I
: V
DSS
th
= 25°C (initial), L = 25 mH, R
(Note 2)
= 0.8~2.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2201
fs
DS
| = 3.5 S (typ.)
= 10 V, I
DS
= 0.28 Ω (typ.)
= 100 V)
−55~150
Rating
Max
6.25
100
100
±20
140
150
125
D
G
12
20
3
3
2
1
= 1 mA)
= 25 Ω, I
AR
°C / W
°C / W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 3 A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2
−π−MOSV)
2-7B1B
2-7J1B
SC-64
SC-64
2006-11-20
―
―
2SK2201
Unit: mm
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2sk2201 Summary of contents
Page 1
... T −55~150 °C stg Symbol Max Unit R 6.25 ° (ch−c) R 125 ° (ch− Ω 2SK2201 2 −π−MOSV) Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 2006-11-20 ...
Page 2
... Symbol Test Condition I — — DRP DSF 2SK2201 Min Typ. Max — — ±10 — — 100 100 — 0.8 — 2.0 — 0.36 0.45 — 0.28 0.35 1.5 3.5 — 280 — 50 — 105 — ...
Page 3
... 3 2SK2201 2006-11-20 ...
Page 4
... 4 2SK2201 2006-11-20 ...
Page 5
... Ω 2SK2201 1 ⎛ B ⎞ VDSS 2 = ⋅ L ⋅ I ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD 2006-11-20 ...
Page 6
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2201 20070701-EN 2006-11-20 ...