2sk3845 TOSHIBA Semiconductor CORPORATION, 2sk3845 Datasheet
2sk3845
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2sk3845 Summary of contents
Page 1
... 12 150 °C ch −55 to150 T °C stg Symbol Max Unit R 1.0 °C/W th (ch- °C/W th (ch- Ω 2SK3845 Unit GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ 2006-11-17 ...
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... Test Condition ⎯ ⎯ I DRP = DSF / A/μ 2SK3845 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 100 ⎯ ⎯ 60 ⎯ ⎯ 35 ⎯ 2.0 4.0 ⎯ 4.7 5.8 ⎯ ⎯ ⎯ 12400 ⎯ ...
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... 1.0 0 (V) Drain−source voltage V 1.0 0.8 0.6 0.4 0 (V) Gate−source voltage V 100 Common source Tc = 25°C Pulse test 10 1 1000 1 3 2SK3845 I – Common source Tc = 25°C 5.2 Pulse test 5 4.8 4 – Common source Tc = 25° ...
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... Pulse test C iss oss 1 C rss 0 −80 −40 100 (V) Dynamic input/output characteristics 160 0 4 2SK3845 − Common source Tc = 25°C Pulse test 0.4 0.6 0.8 1.0 1.2 (V) DS − ...
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... Pulse width t (S) w 500 400 300 200 100 Channel temperature (initial) Tch (°C) 100 Test circuit = 25 Ω μ 2SK3845 – 100 125 150 B VDSS Wave form ⎛ ⎞ ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3845 20070701-EN 2006-11-17 ...