2sk3857tk TOSHIBA Semiconductor CORPORATION, 2sk3857tk Datasheet - Page 2

• Manufacturer Part Number: 2sk3857tk
• Description: Silicon N Channel Junction Type For Ecm
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Time Output Stability Test Method
a) TEST CIRCUIT
Electrical Characteristics
Drain Current
Drain Current
Gate-Source Cut-off Voltage V
Forward transfer admittance
Gate-Drain Voltage
Input capacitance
Voltage Gain
Delta Voltage Gain
Delta Voltage Gain
Noise Voltage
Total Harmonic Distortion
Time Output Stability
Characteristic
Vout
V
DD=2.0V
V
Symbol
DGv(V)
(BR)GDO
GS(OFF)
DGv(f)
I
THD
|Y
C
DSS
VN
tos
Gv
I
D
iss
fs
|
(Ta=25°C)
V
V
V
V
IG=-10μA
V
V
V
V
V
V
V
DS
DD
DS
DS
DS
DD
DD
DD
DD
DD
DD
= 2 V, V
= 2 V, RL= 2.2kΩ,Cg = 5pF
= 2 V, I
= 2 V,V
= 2 V, V
= 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV
= 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV
= 2V to 1.5V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz, vin=100mV
= 2V, RL= 1kΩ,Cg = 10pF,Gv=80dB, A-Curve Filter
= 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz, vin=50mV
= 2V, RL= 2.2kΩ,Cg = 5pF
b) TEST SIGNAL
Vout
V
D
DD
GS
GS
GS
= 1μA
= 0V
= 0
= 0, f = 1 MHz
V
DD-ID*RL
0V
0V
2V
2
Test Condition
t
os
50%
90%
140
-0.1
-3.0
Min
0.9
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2SK3857TK
Typ.
-0.5
-0.8
100
1.3
3.5
0.7
25
⎯
⎯
⎯
⎯
0
2007-11-01
Max
-1.0
350
370
200
⎯
⎯
⎯
⎯
55
⎯
-1
-2
Unit
mS
mV
ms
µA
µA
dB
dB
dB
pF
V
%
V