2sk3443 TOSHIBA Semiconductor CORPORATION, 2sk3443 Datasheet - Page 4

• Manufacturer Part Number: 2sk3443
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

30000
10000
5000
3000
1000
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
500
300
100
200
160
120
0.2
0.1
50
30
10
80
40
10
−80
0
0.1
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
−40
40
Drain-source voltage V
Case temperature Tc
Case temperature Tc
1
Capacitance – V
0
R
3
80
DS (ON)
P
D
40
10
– Tc
I D = 30 A
– Tc
120
30
80
DS
DS
I D = 15 A
(°C)
(°C)
100
(V)
160
C oss
C iss
C rss
I D = 7.5 A
120
300
1000
160
200
4
1000
100
200
160
120
10
80
40
−80
1
6
5
4
3
2
1
0
0
0
0
Common source
Tc = 25°C
Pulse test
V DS
10 V
−0.2 −0.4
Dynamic input/output characteristics
5 V
−40
20
Drain-source voltage V
Case temperature Tc
Total gate charge Q
3 V
−0.6 −0.8 −1.0
V GS
0
40
I
V GS = 0 V
DR
V
th
– V
40
60 V
30 V
V DD = 120 V
– Tc
DS
−1.2
60
g
80
Common source
I D = 30 A
Tc = 25°C
Pulse test
DS
−1.4
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
(°C)
(V)
−1.6
80
120
−1.8
2006-11-20
2SK3443
−2.0
160
100
20
16
12
8
4
0