si2307cds Vishay, si2307cds Datasheet

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si2307cds

Manufacturer Part Number
si2307cds
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
G
S
0.138 at V
0.088 at V
1
2
Si2307CDS (N7)*
* Marking Code
Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
(SOT-23)
Top View
TO-236
DS(on)
GS
GS
= - 4.5 V
J
a, b
(Ω)
= - 10 V
= 150 °C)
a, c
3
P-Channel 30-V (D-S) MOSFET
D
a, b
a, b
I
D
- 2.7
- 2.2
(A)
a, b
c
A
= 25 °C, unless otherwise noted
Q
Steady State
4.1 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• Load Switch for Portable Devices
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
90
55
G
P-Channel MOSFET
- 55 to 150
- 0.91
- 2.7
- 2.2
1.1
0.7
Limit
± 20
- 2.8
- 1.5
1.14
- 3.5
- 30
- 12
260
1.8
a, b
a, b
a, b
a, b
a, b
S
D
Maximum
115
70
Vishay Siliconix
Si2307CDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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si2307cds Summary of contents

Page 1

... Top View Si2307CDS (N7)* * Marking Code Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free) Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width Continuous Source-Drain Diode Current ...

Page 2

... Si2307CDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 68768 S-81580-Rev. A, 07-Jul-08 New Product 1 Si2307CDS Vishay Siliconix 2.0 1.5 1 ° 125 ° °C C 0.0 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 600 450 ...

Page 4

... Si2307CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ° 150 °C J 0.1 T 0.01 0.001 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 250 µA D 0.2 0.0 -0.2 -0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.4 0.3 0 °C J 0.1 0.0 1.2 1 100 ...

Page 5

... Document Number: 68768 S-81580-Rev. A, 07-Jul-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si2307CDS Vishay Siliconix 100 10 Notes Duty Cycle ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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