si2307cds Vishay, si2307cds Datasheet - Page 4

• Manufacturer Part Number: si2307cds
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si2307CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
-0.2
-0.4
0.01
0.6
0.4
0.2
0.0
0.1
10
- 50
1
0.0
T
J
- 25
= 150 °C
Source-Drain Diode Forward Voltage
0.3
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 25 °C
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
T
0.9
J
75
= - 50 °C
0.01
100
0.1
100
10
1
0.1
1.2
I
D
Safe Operating Area, Junction-to-Ambient
* V
125
Limited by R
Single Pulse
= 1 mA
T
A
GS
= 25 °C
New Product
> minimum V
150
1.5
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
= 3.5 A
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
0.1
2
V
100
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
T
A
= 25 °C
T
T
S-81580-Rev. A, 07-Jul-08
Document Number: 68768
J
J
10
= 125 °C
= 25 °C
6
100
8
1000
10