irf2907z International Rectifier Corp., irf2907z Datasheet - Page 2

• Manufacturer Part Number: irf2907z
• Description: Power Mosfets
• Manufacturer: International Rectifier Corp.


‚
ƒ
„
V
∆ΒV
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
2
Repetitive rating; pulse width limited by
L=0.11mH, R
Part not recommended for use above this value.
I
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
T
max. junction temperature. (See fig. 11).
Limited by T
SD
J
DSS
eff.
≤ 175°C.
≤ 75A, di/dt ≤ 340A/µs, V
/∆T
J
J
Jmax
G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 25Ω, I
, starting T
Parameter
AS
= 75A, V
Parameter
J
DD
™
= 25°C,
≤ V
GS
(BR)DSS
=10V.
,
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
…
†
‡
ˆ
‰
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
75
C
charging time as C
Limited by T
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
avalanche performance.
oss
θ
is measured at
0.069
7500
3640
1020
–––
–––
–––
–––
–––
–––
–––
180
140
100
970
510
650
–––
–––
–––
eff. is a fixed capacitance that gives the same
3.5
5.0
46
65
19
97
13
41
59
-200
–––
–––
–––
250
200
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
680
Jmax
4.5
4.0
1.3
20
75
61
89
, see Fig.12a, 12b, 15, 16 for typical repetitive
oss
V/°C
2
mΩ
nC
nH
nC
J
µA
nA
pF
ns
ns
Pak, when mounted on 1" square PCB
V
V
S
A
V
while V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 75A
= 75A
= 25°C, I
= 25°C, I
= 2.5Ω
DS
= 0V, I
= 10V, I
= V
= 25V, I
= 75V, V
= 75V, V
= 20V
= -20V
= 60V
= 10V
= 38V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
is rising from 0 to 80% V
GS
, I
D
f
f
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 75A, V
= 75A, V
= 75A
= 75A
= 0V to 60V
= 1.0V, ƒ = 1.0MHz
= 60V, ƒ = 1.0MHz
= 0V
= 0V, T
f
www.irf.com
f
D
= 1mA
DD
GS
J
G
= 125°C
= 38V
= 0V
G
DSS
f
S
D
S
D
.