irf9z34n International Rectifier Corp., irf9z34n Datasheet - Page 2

• Manufacturer Part Number: irf9z34n
• Description: -55v Single P-channel Hexfet Power Mosfet In A To-220ab Package
• Manufacturer: International Rectifier Corp.

IRF9Z34N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
L
L
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
Starting T
(BR)DSS
R
max. junction temperature. ( See fig. 11 )
G
= 25 , I
/ T
J
J
= 25°C, L = 3.6mH
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
AS
= -10A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Pulse width
I
T
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
SD
-55
4.2
–––
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
-10A, di/dt
-0.05 –––
–––
–––
110
–––
––– 0.10
–––
–––
––– -250
–––
––– -100
–––
–––
620
280
140
–––
–––
–––
4.5
13
55
30
41
54
7.5
–––
–––
-4.0
100
–––
–––
-1.6
–––
–––
–––
–––
–––
–––
–––
160
300µs; duty cycle
-25
7.9
-68
35
16
-19
82
-290A/µs, V
V/°C
nH
µA
nA
nC
ns
nC
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
V
V
V
I
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -10A
= -10A
DD
= 25°C, I
= 25°C, I
= 13
= 2.6
= -44V
= -28V
= -25V
= 0V, I
= -10V, I
= V
= 25V, I
= -55V, V
= -44V, V
= 20V
= -20V
= -10V, See Fig. 6 and 13
= 0V
2%.
V
GS
(BR)DSS
, I
D
See Fig. 10
S
F
D
D
Conditions
= -250µA
D
Conditions
= -10A
= -10A, V
GS
GS
= -250µA
= -10A
= -10A
,
= 0V
= 0V, T
D
= -1mA
GS
G
J
= 150°C
= 0V
G
S
+L
D
S
D
)
S
D