irf6715m International Rectifier Corp., irf6715m Datasheet

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irf6715m

Manufacturer Part Number
irf6715m
Description
Directfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

ƒ
www.irf.com
Description
The IRF6715MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6715MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6715MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6715MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
V
V
I
I
I
I
E
I
D
D
D
DM
AR
RoHs Compliant Containing No Lead and Bromide 
Low Profile (<0.6 mm)
Dual Sided Cooling Compatible 
Ultra Low Package Inductance
Optimized for High Frequency Switching 
Ideal for CPU Core DC-DC Converters
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques 
100% Rg tested
DS
GS
AS
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
4
3
2
1
0
A
A
C
2
= 25°C
= 70°C
= 25°C
T J = 25°C
Fig 1. Typical On-Resistance Vs. Gate Voltage
4
V GS, Gate -to -Source Voltage (V)
SX
6
8
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
10
ST
T J = 125°C
12
14
Ãg
16
I D = 34A
g
Parameter
18
GS
GS
GS
MQ
@ 10V
@ 10V
@ 10V
20
h
f
MX
14.0
12.0
10.0
25V max ±20V max 1.3mΩ@ 10V 2.1mΩ@ 4.5V
Q
40nC
8.0
6.0
4.0
2.0
0.0
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
DSS
measured with thermocouple mounted to top (Drain) of part.
0
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
MT
I D = 27A

J
12.0nC
= 25°C, L = 0.56mH, R
Q
20
IRF6715MTRPbF
gd
V
Q G Total Gate Charge (nC)
DirectFET™ Power MOSFET ‚
GS
MP
V DS = 20V
V DS = 13V
40
MX
IRF6715MPbF
5.3nC
Q
gs2
Max.
60
180
270
200
±20
25
34
27
27
R
DS(on)
G
37nC
Q
= 25Ω, I
80
rr
TM
DirectFET™ ISOMETRIC
AS
packaging to achieve
100
26nC
Q
= 27A.
oss
R
DS(on)
120
Units
V
mJ
1.9V
V
A
A
08/15/07
gs(th)
1

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irf6715m Summary of contents

Page 1

... The IRF6715MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 T J ...

Page 5

150° 25° -40° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. ...

Page 6

DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS ...

Page 8

DIMENSIONS IMPERIAL METRIC MIN CODE MIN MAX MAX 0.246 A 6.25 6.35 0.250 B 4.80 5.05 0.189 0.201 C 3.85 3.95 0.152 0.156 D 0.35 0.45 0.014 0.018 E 0.027 0.68 0.72 0.028 F 0.027 0.68 0.72 ...

Page 9

... NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6715MTRPBF). For 1000 parts on 7" reel, order IRF6715MTR1PBF STANDARD OPTION (QTY 4800) CODE MIN A 330.0 B 20 100 12.4 H 11.9 NOTE: CONTROLLING DIMENSIONS WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www ...

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