irf7314q International Rectifier Corp., irf7314q Datasheet
irf7314q
Manufacturer Part Number
irf7314q
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet
1.IRF7314Q.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
irf7314qTRPBF
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
Typical Applications
Thermal Resistance
Benefits
Description
Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the
lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual
MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
www.irf.com
V
I
I
I
P
P
V
E
I
E
T
R
D
D
DM
AR
DS
D
D
GS
AS
AR
J
Air bag
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Advanced Process Technology
Dual P-Channel MOSFET
Ultra Low On-Resistance
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
@ T
@ T
175°C Operating Temperature
, T
JA
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Gate-to-Source Voltage
Parameter
Maximum Junction-to-Ambient
Linear Derating Factor
Parameter
Q
GS
GS
S
S
@ 10V
@ 10V
S
Max.
G 2
G 1
S2
S 1
V
-20V
DSS
1
2
3
4
T o p V ie w
HEXFET
See Fig.14, 15, 16
0.058@V
0.098@V
8
7
6
5
-55 to + 175
R
DS(on)
± 12
D 1
D 1
D 2
Max.
D 2
-5.2
-4.3
610
-5.2
-20
-43
Units
2.4
1.7
16
62.5
IRF7314Q
®
GS
GS
Power MOSFET
max
= -4.5V
= -2.7V
SO-8
PD -93945A
-4.42A
-5.2A
mW/°C
Units
I
°C/W
D
mJ
mJ
°C
W
W
V
V
A
A
1
03/20/02