BT149 NXP Semiconductors, BT149 Datasheet
BT149
Manufacturer Part Number
BT149
Description
Thyristors Logic Level
Manufacturer
NXP Semiconductors
Datasheet
1.BT149.pdf
(6 pages)
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Philips Semiconductors
GENERAL DESCRIPTION
Glass passivated, sensitive gate
thyristors in a plastic envelope,
intended for use in general purpose
switching
applications. These devices are
intended to be interfaced directly to
microcontrollers,
circuits and other low power gate
trigger circuits.
PINNING - TO92 variant
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
September 1997
Thyristors
logic level
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
PIN
t
stg
j
DRM
GM
RGM
GM
G(AV)
T
1
2
3
/dt
, V
cathode
gate
anode
RRM
and
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
DESCRIPTION
t for fusing
logic
phase
integrated
control
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave;
T
all conduction angles
t = 10 ms
t = 8.3 ms
half sine wave;
T
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
lead
j
T(AV)
T(RMS)
TSM
G
= 25 ˚C prior to surge
DRM
/dt = 100 mA/ s
= 2 A; I
,
83 ˚C
G
= 10 mA;
PARAMETER
Repetitive peak
off-state voltages
Average on-state
current
RMS on-state current
Non-repetitive peak
on-state current
3 2 1
1
MIN.
BT149
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
200
B
MAX. MAX. MAX. MAX. UNIT
200
0.5
0.8
SYMBOL
B
8
1
a
400
D
400
0.5
0.8
D
8
MAX.
1
0.32
150
125
0.5
0.8
0.1
50
8
9
1
5
5
2
Product specification
500
E
500
0.5
0.8
BT149 series
E
8
1
g
600
G
600
0.5
0.8
G
8
1
Rev 1.200
k
UNIT
A/ s
A
˚C
˚C
W
W
V
A
A
A
A
A
V
V
2
V
A
A
A
s
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BT149 Summary of contents
Page 1
... ˚C prior to surge mA /dt = 100 mA over any 20 ms period - - Product specification BT149 series MAX. MAX. MAX. MAX. UNIT 200 400 500 600 0.5 0.5 0.5 0.5 0.8 0.8 0.8 0 SYMBOL MAX. ...
Page 2
... mA DRM(max / 125 ˚C; D DRM(max Product specification BT149 series MIN. TYP. MAX. UNIT - - 60 K/W - 150 - K/W MIN. TYP. MAX. UNIT - 50 200 ...
Page 3
... Fig.6. Normalised gate trigger voltage T(RMS lead Product specification BT149 series BT169 I TSM time Tj initial = 25 C max 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT169 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...
Page 4
... GK dVD/dt (V/us) 1000 100 100 150 ( (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT149 series BT169 max typ 0 BT169 0.1ms 1ms 10ms 0. j-lead pulse width t . ...
Page 5
... Philips Semiconductors Thyristors logic level MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". September 1997 2.54 0.66 1.6 0.56 4.8 max 5.2 max 12.7 min 0.48 0. Fig.13. TO92; plastic envelope. 5 Product specification BT149 series 4.2 max 2.5 max 0.40 min Rev 1.200 ...
Page 6
... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Product specification BT149 series Rev 1.200 ...