mcr106-6 ON Semiconductor, mcr106-6 Datasheet - Page 2

• Manufacturer Part Number: mcr106-6
• Description: Sensitive Gate Silicon Controlled Rectifiers
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse Width
4. R
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
MCR106−6
MCR106−6G
MCR106−8
MCR106−8G
Peak Repetitive Forward or Reverse Blocking Current
Peak Forward On−State Voltage (Note 3)
Gate Trigger Current (Continuous dc) (Note 4)
Gate Trigger Voltage (Continuous dc) (Note 4)
Gate Non-Trigger Voltage (Note 4)
Holding Current
Critical Rate−of−Rise of Off−State Voltage
(V
(I
(V
(T
(V
(V
(V
(T
GK
TM
AK
AK
C
AK
AK
AK
J
= 110 C)
current is not included in measurement.
= −40 C)
= 4 A Peak)
= Rated V
= 7 Vdc, R
= 7 Vdc, R
= 12 Vdc, R
= 7 Vdc, Initiating Current = 200 mA, Gate Open)
DRM
L
L
L
= 100 Ohms)
= 100 Ohms)
Device
= 100 Ohms, T
or V
RRM
1.0 ms, Duty Cycle
; R
Characteristic
Characteristic
GK
J
= 1000 Ohms)
= 110 C)
(T
C
= 25 C unless otherwise noted.)
1%.
MCR106−6, MCR106−8
http://onsemi.com
T
T
J
J
= 25 C
= 110 C
2
TO−225AA
TO−225AA
TO−225AA
TO−225AA
(Pb−Free)
(Pb−Free)
Package
I
DRM
Symbol
Symbol
R
dv/dt
R
V
V
V
I
T
GT
I
qJC
qJA
, I
GD
TM
GT
H
L
RRM
Min
0.2
−
−
−
−
−
−
−
−
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
Shipping
Max
Typ
260
3.0
75
10
−
−
−
−
−
−
−
−
Max
200
200
500
2.0
1.0
5.0
10
−
−
V/ms
Unit
Unit
C/W
C/W
mA
mA
mA
mA
V
V
V
C