st10f273m STMicroelectronics, st10f273m Datasheet - Page 137
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
st10f273m
Manufacturer Part Number
st10f273m
Description
16-bit Mcu With 512 Kbyte Flash Memory And 36 Kbyte Ram
Manufacturer
STMicroelectronics
Datasheet
1.ST10F273M.pdf
(182 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
st10f273m-4Q3
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
st10f273m-ABG3
Manufacturer:
ST
Quantity:
20 000
ST10F273M
24.7
Table 59.
1. Two 64 Kbyte Flash Sectors may be typically used to emulate up to 4, 8 or 16 Kbytes of EEPROM.
A/D converter characteristics
V
V
Table 60.
V
V
V
I
t
t
DNL
INL
OFS
TUE
K
C
C
AREF
S
C
DD
SS
AREF
AGND
AIN
P1
P2
Number of program / erase
Symbol
Therefore, in case of an emulation of a 16 Kbyte EEPROM, 100,000 Flash Program / Erase cycles are
equivalent to 800,000 EEPROM Program/Erase cycles.
For an efficient use of the Read While Write feature and/or EEPROM Emulation, please refer to the
dedicated application note EEPROM Emulation with ST10F2xx (AN2061). Contact your local field service,
local sales person or STMicroelectronics representative to obtain a copy of such a guideline document.
≤ V
= 5V ± 10%, V
(-40°C < T
AGND
SR
SR
SR
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
100000
cycles
0 - 100
10000
Flash data retention characteristics
A/D converter characteristics
1000
≤ V
Analog reference voltage
Analog ground voltage
Analog input voltage
Reference supply current
Sample time
Conversion time
Differential non linearity
Integral non linearity
Offset error
Total unadjusted error
Coupling factor between
inputs
Input pin capacitance
A
< 125°C)
SS
(3)(7)
SS
+ 0.2V
= 0V, T
Parameter
(6)
A
= -40 to +125°C, 4.5V ≤ V
(6)
(2)
(3)(8)
(6)
256 Kbyte (code store)
(6)
(1)
> 20 years
Running mode
Power down mode
(4)
(5)
No overload
No overload
No overload
Port5
Port1 - No overload
Port1 - Overload
On both Port5 and
Port1
Port5
Port1
(average ambient temperature 60°C)
-
-
-
Test condition
Data retention time
(3)
AREF
(3)
(3)
≤ V
Electrical characteristics
(EEPROM emulation)
DD
V
–1.5
–1.5
–2.0
–5.0
–7.0
Min
V
AGND
4.5
–1
,
–
–
1
3
–
–
–
SS
Limit values
> 20 years
> 20 years
64 Kbyte
10 years
1 year
V
SS
V
10
Max
+1.5
+1.5
+2.0
+5.0
+7.0
V
AREF
+1
DD
5
1
–
–
3
4
6
+ 0.2
–6
137/182
(1)
Unit
LSB
LSB
LSB
LSB
mA
µA
pF
pF
µs
µs
V
V
V
–