b052n06l3 Infineon Technologies Corporation, b052n06l3 Datasheet - Page 7

• Manufacturer Part Number: b052n06l3
• Description: Optimos 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.2
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
100
=f(t
10
1
70
65
60
55
50
0.1
AV
-60
=f(T
); R
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
1
150 °C
20
t
AV
T
10
j
[µs]
60
[°C]
100 °C
100
25 °C
100
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
12
10
V
8
6
4
2
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
Q
D
IPB049N06L3 G IPP052N06L3 G
=80 A pulsed
20
g s
40
Q
Q
gate
g
Q
[nC]
sw
Q
60
g d
12 V
80
48 V
30 V
Q
g ate
2009-02-12
100