fs4422 Fortune Semiconductor Corporation, fs4422 Datasheet
fs4422
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fs4422 Summary of contents
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... REV. 1.2 FS4422-DS-12_EN Datasheet FS4422 Single N-Channel Enhancement Mode Power MOSFET MAY 2011 ...
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... This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product Rev. 1.2 FS4422 2/6 ...
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... PD @TA = 25℃ Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Is Diode Forward Current Rev. 1.2 = 10V 11A 4.5V 10A) D Package Type SOP-8 Parameter 30 ± -55 to 150 -55 to 150 4.3 FS4422 Quantity/Reel 3,000 Rating Units ℃ ℃ A 3/6 ...
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... DS I =1A,V = =11A,dI /dt=100A μ s VGS=VDS=0V,F=1MHz V =0V,V =15V GS DS Frequency=1MHz V =10V,V =15V =3Ω ,R =1.35Ω = =10V,V =15V =11A DS FS4422 Value Unit ℃/W Min. Typ. Max. Units mΩ 19.6 24 mΩ 1.3 1.8 2 100 nA 0.75 1 ...
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... Fig 3.Static Drain-Source On-Resistance Rev. 1.2 3 deg 1.5 125 deg 1 0.5 0 1200 0.4 0.5 Voltage ( V ) Fig 2. Doide Forward Voltage RDS_IDS= deg 15 125 deg Gate Source Voltage ( V ) Fig 4. Static Drain-Source On-Resistance FS4422 VSD 25 deg 125 deg 0.6 0.7 0.8 0.9 25 deg 125 deg 5/6 ...
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... Package Information 10. Revision History Version Date Page 1.0 2010/12/22 - 1.1 2011/02/18 4 1.2 2011/05/26 3 Rev. 1.2 Description Version 1.0 released Revise IGSS Unit nA Revise Applications FS4422 6/6 ...