fs4435 Fortune Semiconductor Corporation, fs4435 Datasheet
fs4435
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fs4435 Summary of contents
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... REV. 1.4 FS4435-DS-14_EN Datasheet FS4435 Single P-Channel Enhancement Mode Power MOSFET MAY 2011 ...
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... This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product Rev. 1.4 FS4435 2/6 ...
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... PD @TA = 25℃ Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Is Diode Forward Current Rev. 1.4 = -10V -10A -5V -5A) D Package Type SOP-8 G Parameter -30 ±25 -10.5 -8 -80 3.1 -55 to 150 -55 to 150 -3.5 FS4435 Quantity/Reel 3,000 D S Rating Units ℃ ℃ A 3/6 ...
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... DS I =-1A,V = =-10A,dI /dt=100A μ s VGS=VDS=0V,F=1MHz V =0V,V =-15V GS DS Frequency=1MHz V =-10V,V =-15V =3Ω ,R =1.5Ω =-10V,V =-15V =-11A DS FS4435 Value Unit ℃/W Min. Typ. Max. Units - mΩ mΩ -1 ±100 -1 ...
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... Fig 3.Static Drain-Source On-Resistance Rev. 1.4 - 0.4 0.5 -31.5 -0.5 -32 -1 -32.5 -1.5 25 deg -33 -2 125 deg -33.5 -2.5 -34 -3 -34.5 -3.5 Fig 2. Doide Forward Voltage deg 20 125 deg Gate Source Voltage ( V ) Fig 4. Static Drain-Source On-Resistance FS4435 VSD 0.6 0.7 0.8 0.9 25 deg 125 deg Voltage ( V ) RDS_IDS=-8A 25 deg 125 deg 5/6 ...
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... -20V -11A TYP:16mΩ Revise DS(ON -10V -10A TYP:19mΩ -5V -5A TYP:27mΩ MIN = -1V, TYP = -1.7V, MAX = -3V V GS(th) Delete Test Conditions RDS(ON)：VGS=-20V ID=-11A Revise Applications FS4435 MAX:20mΩ MAX:35mΩ MAX:19mΩ MAX:25mΩ MAX:36mΩ 6/6 ...