MD7P19130H Freescale Semiconductor, Inc, MD7P19130H Datasheet - Page 7

• Manufacturer Part Number: MD7P19130H
• Description: Rf Power Field Effect Transistors N-channel Enhancement -mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
24
20
16
12
8
4
0
1550
Figure 9. Broadband Frequency Response
1650
V
I
DQ
1750
DD
= 1250 mA
= 28 Vdc
1850
f, FREQUENCY (MHz)
1950
S21
23
21
19
17
15
13
11
Figure 8. Single - Carrier W - CDMA Power Gain, Drain
S11
2050
1
V
Single−Carrier W−CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
Probability (CCDF)
DD
Efficiency and ACPR versus Output Power
T
= 28 Vdc, I
C
2150
= −40°C
25°C
85°C
TYPICAL CHARACTERISTICS
P
DQ
out
2250
, OUTPUT POWER (WATTS) AVG.
= 1250 mA, f = 1960 MHz
2350
0
−5
−10
−15
−20
−25
−30
10
G
ps
ACPR
10
10
10
10
η
9
8
7
6
D
90
Figure 10. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
−40°C
85°C
−40°C
25°C
110
25°C
100
85°C
T
130
J
DD
, JUNCTION TEMPERATURE (°C)
200
= 28 Vdc, P
60
50
40
30
20
10
0
MD7P19130HR3 MD7P19130HSR3
150
out
170
= 40 W Avg., and η
0
−10
−20
−30
−40
−50
−60
190
210
D
= 30%.
230
250
7