EMD12164P Emlsi Inc., EMD12164P Datasheet - Page 8

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EMD12164P

Manufacturer Part Number
EMD12164P
Description
512m 32m X 16 Mobile Ddr Sdram
Manufacturer
Emlsi Inc.
Datasheet
NOTE :
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is 1V/ns.
3. Definitions for IDD:
Table 7: AC OPERATING TEST CONDITIONS
(V
NOTE :
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
3. CK and CKB crossing voltage.
AC input levels(Vih/Vil)
Input timing measurement reference level
Input rise and fall time
Output timing measurement reference level
Vix
Output load condition
LOW is defined as V
HIGH is defined as V
STABLE is defined as inputs stable at a HIGH or LOW level ;
SWITCHING is defined as :
DD
- address and command : inputs changing between HIGH and LOW once per two clock cycles ;
- data bus inputs : DQ changing between HIGH and LOW once per clock cycle ; DM and DQS are STABLE
Output
= 1.7V ~ 1.95V, T
Figure 1. DC Output Load Circuit
10.6

Parameter
IN
IN

A

= -25
0.1 * VDDQ ;
0.9 * VDDQ ;
£
1.8V
13.9
20
~85
V
V

OH
OL

£
(DC) = 0.1
(DC) = 0.9
for Extended)


V
V
DDQ
DDQ
0.4
, I
, I

OL
OH
0.8
V
= 0.1
DDQ
= -0.1

8
V
See Figure 2
(Min) / 0.6
0.5
0.5
DDQ
¨
¨
Value


1.0
/ 0.2
V
V
Output
DDQ
DDQ


Figure 2. AC Output Load Circuit
V
V
DDQ
DDQ
512M: 32M x 16 Mobile DDR SDRAM
(Max)
Z0=50




Unit
V/
V
V
V
V

EMD12164P
Preliminary
Vtt=0.5
50
20
Note


3

Rev 0.0
V
DDQ

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