bsb015n04nx3g Infineon Technologies Corporation, bsb015n04nx3g Datasheet
bsb015n04nx3g
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bsb015n04nx3g Summary of contents
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TM OptiMOS 3 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter ...
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Typ. output characteristics I =f =25 ° parameter 800 10 V 720 640 560 480 400 320 240 160 Typ. transfer characteristics I =f ...
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Drain-source on-state resistance =10 V DS(on 2 1.6 1.2 0.8 0.4 0 -60 - Typ. capacitances C =f ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...
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Rev. 2.0 page 8 BSB015N04NX3 G 2009-05-11 ...
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Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 2.0 MG-WDSON-2 page 9 BSB015N04NX3 G 2009-05-11 ...
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Dimensions in mm Recommended stencil thickness 150 µm Rev. 2.0 page 10 BSB015N04NX3 G 2009-05-11 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...