bsb015n04nx3g Infineon Technologies Corporation, bsb015n04nx3g Datasheet - Page 2

• Manufacturer Part Number: bsb015n04nx3g
• Description: Optimostm3 Power- Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
5)
connection. PCB is vertical in still air.
Maximum ratings, at T
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Parameter
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
P
T
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
j
tot
(BR)DSS
GS(th)
, T
thJC
thJA
DS(on)
G
stg
T
T
R
bottom
top
6 cm
V
V
V
T
V
T
V
V
|V
I
D
page 2
C
A
j
j
GS
DS
DS
DS
GS
GS
thJA
=25 °C
=125 °C
=30 A
DS
=25 °C,
=25 °C
=V
=40 V, V
=40 V, V
=0 V, I
=20 V, V
=10 V, I
|>2|I
2
=45 K/W
cooling area
GS
, I
D
|R
D
D
=1 mA
D
=250 µA
GS
GS
DS
DS(on)max
=30 A
=0 V,
=0 V,
=0 V
5)
,
min.
0.2
40
55
2
-
-
-
-
-
-
-
-40 ... 150
55/150/56
Values
Value
typ.
110
2.8
1.0
0.1
1.3
0.5
89
10
10
BSB015N04NX3 G
-
-
-
-
max.
100
100
1.4
1.5
1.0
45
10
4
-
-
Unit
W
°C
Unit
K/W
V
µA
nA
Ω
S
2009-05-11