bcw29-bcw30 NXP Semiconductors, bcw29-bcw30 Datasheet - Page 3

• Manufacturer Part Number: bcw29-bcw30
• Description: Bcw29; Bcw30 Pnp General Purpose Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 13
R
I
I
h
V
V
V
C
f
F
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
th(j-a)
= 25 C unless otherwise specified.
c
PNP general purpose transistors
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
BCW29
BCW30
BCW29
BCW30
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= 0; V
= 10 A; V
= 2 mA; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 2 mA; V
= I
= 10 mA; V
= 200 A; V
e
= 0; V
CB
CB
EB
3
= 32 V
= 32 V; T
= 5 V
CONDITIONS
CB
note 1
CE
CE
B
B
B
B
CE
CE
= 10 V; f = 1 MHz
CE
= 0.5 mA
= 2.5 mA
= 0.5 mA
= 2.5 mA
= 5 V
= 5 V
= 5 V
= 5 V; f = 100 MHz 100
CONDITIONS
= 5 V; R
j
= 100 C
S
= 2 k ;
120
215
MIN.
600
BCW29; BCW30
VALUE
500
90
150
4.5
TYP.
80
150
720
810
Product specification
260
500
10
MAX. UNIT
100
10
100
300
750
UNIT
K/W
nA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
A