tpd4120ak TOSHIBA Semiconductor CORPORATION, tpd4120ak Datasheet - Page 8

• Manufacturer Part Number: tpd4120ak
• Description: Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Absolute Maximum Ratings
Thermal Characteristics
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
Power supply voltage
Output current (DC)
Output current (pulse)
Input voltage
V
Power dissipation
(IGBT 1 phase (Tc = 25°C) )
Power dissipation
(FRD1 phase (Tc = 25°C) )
Operating temperature
Junction temperature
Storage temperature
REG
Thermal resistance,
Thermal resistance,
junction to case
junction to case
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
current
Characteristics
Characteristics
Rth(j-c) FRD
Rth(j-c)IGBT
Symbol
P
P
Symbol
C(IGBT)
C(FRD)
I
I
T
V
V
T
REG
I
outp
V
(Ta = 25°C)
out
jopr
T
CC
BB
stg
IN
j
-20 to 135
-55 to 150
-0.5 to 7
Rating
500
150
18
50
36
22
2
3
IGBT 1 phase drive
FRD 1 phase drive
Condition
Unit
mA
°C
°C
°C
8
W
W
V
V
A
A
V
Max
5.8
3.5
℃/ W
℃/ W
Unit
TPD4120AK
2008-05-16
the