tpd4120ak TOSHIBA Semiconductor CORPORATION, tpd4120ak Datasheet - Page 9

no-image

tpd4120ak

Manufacturer Part Number
tpd4120ak
Description
Toshiba Intelligent Power Device High Voltage Monolithic Silicon Power Ic
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Electrical Characteristics
Operating power supply voltage
Current dissipation
Input voltage
SD input voltage
Input current
SD Input current
Output saturation voltage
FRD forward voltage
BSD forward voltage
Regulator voltage
Thermal shutdown temperature
Thermal shutdown hysteresis
V
V
V
V
DIAG saturation voltage
Output on delay time
Output off delay time
Dead time
FRD reverse recovery time
CC
CC
BS
BS
under voltage protection
under voltage protection recovery
under voltage protection
under voltage protection recovery
Characteristics
(Ta = 25°C)
I
V
V
V
V
V
V
V
I
V
BS (OFF)
Symbol
BS (ON)
CC
CC
F (BSD)
V
ΔTSD
BS
BS
CEsat
DIAGsat
CEsat
I
t
I
TSD
V
V
V
V
V
I
V
SDH
dead
I
V
SDL
t
t
I
REG
CC
I
BB
t
on
off
CC
SD
IH
F
BB
IL
F
UVD
UVR
rr
IH
UVD
UVR
IL
H
L
H
L
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
I
V
V
V
V
F
F
F
DIAG
BB
CC
BS
BS
IN
IN
CC
IN
IN
IN
IN
CC
CC
CC
CC
CC
BB
BB
BB
BB
= 1 A, high side
= 1 A, low side
= 500 μA
= “H”, V
= “L” , V
= 5 V
= 0 V
= 5 V
= 0 V
= 450 V
= 15 V, high side ON
= 15 V, high side OFF
= 280 V, V
= 280 V, V
= 280 V, V
= 280 V, V
= 15 V
= 15 V
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V
= 15 V
= 5 mA
9
CC
CC
Test Condition
C
C
O
CC
CC
CC
CC
= 15 V
= 1 A, high side
= 1 A, low side
= 15 V
= 30 mA
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
C
C
C
C
= 1 A
= 1 A
= 1 A
= 1 A
13.5
10.5
Min
135
3.5
6.5
8.5
1.4
50
10
8
Typ.
11.5
280
220
190
200
0.8
2.5
2.4
2.4
1.6
1.6
0.9
9.5
1.6
1.1
15
50
11
TPD4120AK
7
9
2008-05-16
Max
16.5
12.5
10.5
450
410
370
150
100
100
150
185
0.5
1.5
2.0
2.0
1.2
7.5
9.5
0.5
12
5
3
3
3
3
Unit
mA
μA
μA
μA
°C
°C
μs
μs
μs
ns
V
V
V
V
V
V
V
V
V
V
V
V

Related parts for tpd4120ak