lt4920c Lite-On Power Semiconductor, lt4920c Datasheet - Page 2

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lt4920c

Manufacturer Part Number
lt4920c
Description
Dual N-channel 30-v Power Mosfet
Manufacturer
Lite-On Power Semiconductor
Datasheet
Rev 1. SEP. 2009
a.
Notes
Dual N-Channel 30-V Power MOSFET
Electrical Characteristics (T
Symbol
STATIC
V
I
I
I
R
G
V
DYNAMIC
Qg
Qgs
Qgd
C
C
C
t
tr
t
t
t
GSS
DSS
D(ON)
d(on)
d(off)
f
rr
GS(th)
SD
DS(ON)
iss
oss
rss
FS
pulse test:pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing.
b
Parameter
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Surce-Drain Reverse Recovery Time
A
a
=25℃ Unless Otherwise Specified)
Limit
V
V
V
V
T
V
V
V
V
I
V
V
f=1MHz
V
I
R
I
S
D
F
J
DS
DS
DS
DS
DS
GS
GS
DS
DS
DS
DD
=1.7A, di/dt=100A/μs
=1.7A, V
G
=1A, V
=55℃
=6Ω
=V
=0V, V
=30V, V
=30V, V
=10V, I
=4.5V, I
=15V, I
=15V, V
=15V, V
=15V, R
5V, V
GS
GEN
, I
GS
GS
GS
D
D
D
D
GS
GS
GS
GS
=250μA
L
= 6.9A
=6.9A
=10V
=±20V
= 5.8A
=0V
=10V
=15Ω
=0V
=0V
=10V, I
=0V,
D
=6.9A
Min
20
1
Typ
0.75
11.5
350
1.4
2.7
2.3
3.5
26
36
25
65
16
10
32
50
9
LT4920C
Max
±100
450
1.2
25
35
45
15
12
23
40
90
3
1
5
Unit
μA
nC
nA
pF
ns
ns
A
V
V
S

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