lt4936 Lite-On Power Semiconductor, lt4936 Datasheet - Page 2

• Manufacturer Part Number: lt4936
• Description: Dual N-channel 30-v Power Mosfet
• Manufacturer: Lite-On Power Semiconductor

Rev 0. Nov. 2007
Mar,2007-Ver4.0
Dual N-Channel 30-V Power MOSFET
Electrical Characteristics (T
Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
Symbol
STATIC
BV
V
I
I
I
R
V
DYNAMIC
Rg
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
t
t
t
GSS
DSS
D(ON)
d(on)
r
d(off)
f
GS(th)
SD
DS(ON)
DSS
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Diode Forward Voltage
Gate resistance
Input capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall time
A
=25℃ Unless Otherwise Specified)
a
a
Conditions
V
V
V
V
V
T
V
V
V
I
V
V
V
V
I
R
S
D
J
GS
DS
DS
DS
DS
DS
GS
GS
GS
DS
DS
DD
=1.7A, V
G
=1.0A, V
=55℃
=6Ω
≧
=0V, I
=V
=0V, V
=30V, V
=30V, V
=10V, I
=4.5V, I
=0V, V
=15V, V
=15V, V
=15V, R
5V, V
GS
, I
D
GS
GS
DS
GS
GEN
=250μA
D
D
D
GS
GS
GS
GS
=250μA
L
= 5.9A
=±20V
= 4.9A
=0V, f=1MHz
=0V
=10V
=15Ω
=0V
=0V
=0V, f=1.0MHz
=10V, I
=10V
D
=5.9A
Min
1.0
30
20
Typ
380
1.4
0.8
0.8
3.5
23
34
68
18
13
14
32
3
9
5
LT4936
Max
±100
450
3.0
1.2
36
45
20
12
18
42
1
5
8
Unit
mΩ
pF
μA
nA
nC
Ω
ns
V
V
A
V
02